类别是'category.MOSFETs 晶体管阵列' (10000)
- 所有品牌
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 场效应管特性 | 反馈上限-最大值 (Crss) | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | FDS6812A | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 6.7A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 鸥翼 | 260 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | 2 N-Channel (Dual) | SWITCHING | 22m Ω @ 6.7A, 4.5V | 1.5V @ 250μA | 1082pF @ 10V | 19nC @ 4.5V | 20V | 6.7A | 0.22Ohm | 35A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||
![]() | NDS9947 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 2 | 3.5A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 鸥翼 | 260 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | 2 P-Channel (Dual) | SWITCHING | 100m Ω @ 3.5A, 10V | 3V @ 250μA | 542pF @ 10V | 13nC @ 10V | 20V | 3.5A | 0.1Ohm | 15A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||
![]() | FDW2501N | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | SILICON | 6A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | TIN | 鸥翼 | 260 | unknown | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 600mW | 2 N-Channel (Dual) | SWITCHING | 18m Ω @ 6A, 4.5V | 1.5V @ 250μA | 1290pF @ 10V | 17nC @ 4.5V | 20V | 6A | 0.018Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||
![]() | FDS6993 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 2 | 4.3A 6.8A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | TIN | 鸥翼 | 未说明 | unknown | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | 2 P-Channel (Dual) | 55m Ω @ 4.3A, 10V | 3V @ 250μA | 530pF @ 15V | 7.7nC @ 5V | 30V 12V | 4.3A | 0.055Ohm | 20A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||
![]() | APTM50HM75STG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | Chassis Mount, Screw | 底座安装 | SP4 | 4 | SILICON | 4 | 87 ns | -40°C~150°C TJ | Bulk | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 14 | EAR99 | 锡银铜 | 雪崩 额定 | 357W | UPPER | UNSPECIFIED | 14 | 增强型MOSFET | 357W | ISOLATED | 18 ns | 4 N-Channel (H-Bridge) | SWITCHING | 90m Ω @ 23A, 10V | 5V @ 2.5mA | 5600pF @ 25V | 123nC @ 10V | 35ns | 500V | 77 ns | 46A | 30V | 0.09Ohm | 500V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | ||||||||||||||||||||
NVMFD5C462NT1G | ON Semiconductor | 数据表 | 10395 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 48 Weeks | 表面贴装 | 8-PowerTDFN | 17.6A Ta 70A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2017 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 未说明 | not_compliant | 未说明 | 3.2W Ta 50W Tc | 2 N-Channel (Dual) | 5.4m Ω @ 25A, 10V | 3.5V @ 250μA | 1020pF @ 25V | 16nC @ 10V | 40V | Standard | ||||||||||||||||||||||||||||||||||||||||||
![]() | FDW2521C | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | SILICON | 5.5A 3.8A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | TIN | DUAL | 鸥翼 | 260 | unknown | 未说明 | 8 | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 600mW | N and P-Channel | SWITCHING | 21m Ω @ 5.5A, 4.5V | 1.5V @ 250μA | 1082pF @ 10V | 17nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | MO-153AA | 5.5A | 0.021Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||
SH8J66TB1 | ROHM Semiconductor | 数据表 | 2497 In Stock | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 150°C TJ | Tape & Reel (TR) | 2010 | 活跃 | 1 (Unlimited) | 2W | 未说明 | 未说明 | *J66 | 2W | 2 P-Channel (Dual) | 18.5m Ω @ 9A, 10V | 2.5V @ 1mA | 3000pF @ 10V | 35nC @ 5V | 30V | 9A | -30V | 逻辑电平门 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | FDY4001CZ | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOT-563, SOT-666 | YES | SILICON | 200mA 150mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 6 | 未说明 | DUAL | FLAT | 6 | R-PDSO-F6 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 446mW | N and P-Channel | SWITCHING | 5 Ω @ 200mA, 4.5V | 1.5V @ 250μA | 60pF @ 10V | 1.1nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 0.2A | 5Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||
NTLUD3191PZTBG | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-UFDFN Exposed Pad | YES | SILICON | 1.1A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | Obsolete | 1 (Unlimited) | 6 | 哑光锡 | 无铅 | 未说明 | unknown | 未说明 | 6 | S-PDSO-N6 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 500mW | 2 P-Channel (Dual) | SWITCHING | 250m Ω @ 1.5A, 4.5V | 1V @ 250μA | 160pF @ 10V | 3.5nC @ 4.5V | 20V | 1.1A | 0.25Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||
![]() | FDY2001PZ | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOT-563, SOT-666 | YES | SILICON | 150mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 6 | 未说明 | FLAT | unknown | 6 | R-PDSO-F6 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 446mW | 2 P-Channel (Dual) | 8 Ω @ 150mA, 4.5V | 1.5V @ 250μA | 100pF @ 10V | 1.4nC @ 4.5V | 20V | 0.15A | 8Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
![]() | NTMD6N03R2 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 6A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | e0 | yes | Obsolete | 1 (Unlimited) | 8 | 锡铅 | 鸥翼 | 240 | unknown | 30 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.29W | 2 N-Channel (Dual) | SWITCHING | 32m Ω @ 6A, 10V | 2.5V @ 250μA | 950pF @ 24V | 30nC @ 10V | 30V | 6A | 0.032Ohm | 30A | 30V | 325 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | ||||||||||||||||||||||||||
![]() | FDW9926A | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | SILICON | 4.5A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | TIN | 鸥翼 | 260 | unknown | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 600mW | 2 N-Channel (Dual) | SWITCHING | 32m Ω @ 4.5A, 4.5V | 1.5V @ 250μA | 630pF @ 10V | 9nC @ 4.5V | 20V | 4.5A | 0.032Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||
NTUD3171PZT5G | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOT-963 | YES | 200mA | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | Obsolete | 1 (Unlimited) | 6 | TIN | FLAT | 未说明 | 未说明 | 6 | R-PDSO-F6 | COMMERCIAL | 125mW | 2 P-Channel (Dual) | 5 Ω @ 100mA, 4.5V | 1V @ 250μA | 13.5pF @ 15V | 20V | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
![]() | NTHD5903T1G | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SMD, Flat Lead | YES | SILICON | 2.2A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | e3 | no | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 逻辑电平兼容 | C 弯管 | 260 | unknown | 40 | 8 | R-XDSO-C8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.1W | 2 P-Channel (Dual) | SWITCHING | 155m Ω @ 2.2A, 4.5V | 600mV @ 250μA | 7.4nC @ 4.5V | 20V | 2.2A | 0.155Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||
![]() | NTMC1300R2 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 2.2A 1.8A | 2 | -65°C~150°C TJ | Tape & Reel (TR) | e0 | Obsolete | 1 (Unlimited) | 8 | 锡铅 | DUAL | 鸥翼 | unknown | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 90m Ω @ 3A, 10V | 2.2V @ 250μA | 300pF @ 20V | 5nC @ 4.5V | 30V | N-CHANNEL AND P-CHANNEL | 2.2A | 0.09Ohm | 8.5A | 30V | 75 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | FDMJ1023PZ | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-WFDFN Exposed Pad | YES | SILICON | 2.9A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 6 | 无铅 | unknown | 6 | R-PDSO-N6 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 700mW | 2 P-Channel (Dual) | SWITCHING | 112m Ω @ 2.9A, 4.5V | 1V @ 250μA | 400pF @ 10V | 6.5nC @ 4.5V | 20V | 0.0029A | 0.112Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 70 pF | ROHS3 Compliant | |||||||||||||||||||||||||||||||
NTLGD3502NT1G | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-VDFN Exposed Pad | YES | SILICON | 4.3A 3.6A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | e3 | no | Obsolete | 1 (Unlimited) | 6 | 哑光锡 | 无铅 | 260 | 40 | 6 | S-PDSO-N6 | COMMERCIAL | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 1.74W | 2 N-Channel (Dual) | 60m Ω @ 4.3A, 4.5V | 2V @ 250μA | 480pF @ 10V | 4nC @ 4.5V | 20V | 4.3A | 0.06Ohm | 17.2A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||
![]() | HUFA76504DK8T | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | UltraFET™ | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 鸥翼 | 260 | unknown | 未说明 | R-PDSO-G8 | COMMERCIAL | SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 增强型MOSFET | 2.5W | 2 N-Channel (Dual) | SWITCHING | 200m Ω @ 2.5A, 10V | 3V @ 250μA | 270pF @ 25V | 10nC @ 10V | 80V | MS-012AA | 2.5A | 0.2Ohm | 80V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||
![]() | FDS9933BZ | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 4.9A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 鸥翼 | 260 | 30 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | 2 P-Channel (Dual) | SWITCHING | 46m Ω @ 4.9A, 4.5V | 1.5V @ 250μA | 985pF @ 10V | 15nC @ 4.5V | 20V | 4.9A | 0.046Ohm | 30A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||
![]() | FDW2508P | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | SILICON | 6A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | TIN | 鸥翼 | 260 | unknown | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1W | 2 P-Channel (Dual) | SWITCHING | 18m Ω @ 6A, 4.5V | 1.5V @ 250μA | 2644pF @ 6V | 36nC @ 4.5V | 12V | 6A | 0.018Ohm | 12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||
![]() | NTMD6601NR2G | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 1.1A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | Obsolete | 1 (Unlimited) | 8 | TIN | 鸥翼 | 未说明 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 600mW | 2 N-Channel (Dual) | SWITCHING | 215m Ω @ 2.2A, 10V | 3V @ 250μA | 400pF @ 25V | 15nC @ 10V | 80V | 1.1A | 0.215Ohm | 80V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 30 pF | ROHS3 Compliant | ||||||||||||||||||||||||||||
FDM2509NZ | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-WFDFN Exposed Pad | YES | SILICON | 8.7A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | yes | Obsolete | 1 (Unlimited) | 6 | 未说明 | 防静电 | 无铅 | 未说明 | unknown | 未说明 | 6 | R-PDSO-N6 | COMMERCIAL | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 800mW | 2 N-Channel (Dual) | SWITCHING | 18m Ω @ 8.7A, 4.5V | 1.5V @ 250μA | 1200pF @ 10V | 17nC @ 4.5V | 20V | 8.7A | 0.018Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||
![]() | FDS4953 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 5A | 2 | -55°C~175°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 逻辑电平兼容 | 鸥翼 | 260 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | 2 P-Channel (Dual) | SWITCHING | 55m Ω @ 5A, 10V | 3V @ 250μA | 528pF @ 15V | 9nC @ 5V | 30V | 5A | 0.055Ohm | 20A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||
![]() | FDR8702H | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-LSOP (0.130, 3.30mm Width) | YES | SILICON | 3.6A 2.6A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | yes | Obsolete | 1 (Unlimited) | 8 | 未说明 | DUAL | 鸥翼 | 未说明 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 800mW | N and P-Channel | SWITCHING | 38m Ω @ 3.6A, 4.5V | 1.5V @ 250μA | 650pF @ 10V | 10nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 3.6A | 0.038Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant |
FDS6812A
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
NDS9947
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDW2501N
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDS6993
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
APTM50HM75STG
Microsemi Corporation
分类:Transistors - FETs, MOSFETs - Arrays
NVMFD5C462NT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
45.744969
FDW2521C
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
SH8J66TB1
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDY4001CZ
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
NTLUD3191PZTBG
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDY2001PZ
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
NTMD6N03R2
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDW9926A
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
NTUD3171PZT5G
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
NTHD5903T1G
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
NTMC1300R2
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDMJ1023PZ
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
NTLGD3502NT1G
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
HUFA76504DK8T
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDS9933BZ
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDW2508P
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
NTMD6601NR2G
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDM2509NZ
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDS4953
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDR8702H
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
